Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs
نویسندگان
چکیده
We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-todrain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y22-parameter.
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ورودعنوان ژورنال:
- IEICE Electronic Express
دوره 7 شماره
صفحات -
تاریخ انتشار 2010